| PART |
Description |
Maker |
| MG100J6ES50 E002053 |
Silicon N-Channel IGBT for High Power Switching and Motor Control Application(用于大功率转换和电机控制的硅 N沟道绝缘栅双极型晶体 硅N沟道IGBT的大功率开关和电机控制中的应用（用于大功率转换和电机控制的沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Semiconductor
|
| MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠?
From old datasheet system
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG100Q2YS42 E002067 |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| MG100J1ZS40 E002041 |
From old datasheet system
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MG150J2YS50 E002095 |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG400J1US51 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 硅N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
